G - Physics – 01 – R
Patent
G - Physics
01
R
G01R 33/09 (2006.01) G01R 33/44 (2006.01) H01F 10/32 (2006.01) H01L 43/08 (2006.01)
Patent
CA 2284160
A thin-film structure of a magnetic field sensor includes a multilayer system having enhanced magnetoresistive effect and exhibiting spin dependency of electron scattering at an interface as well as diffuse scattering of unreflected electrons. The interface which reflects spin-dependently is intended to lie between respective neighboring layers of magnetic and nonmagnetic material. The materials have lattice dimensions matched to one another and are immiscible. The layers of magnetic material are preferably divided into spin-selectively reflecting and scattering regions.
Persat Nathalie
Van Den Berg Hugo
Aktiengesellschaft Siemens
Fetherstonhaugh & Co.
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