Thin film transistor

Details Thin film transistor Thin film transistor

H - Electricity

01

L

356/149

H01L 29/786 (2006.01)

Patent

CA 2010298

ABSTRACT As described, the invention provides thin film transistors that can reduce the aging variation of the threshold voltage, and can be stably driven by making the energy band gap width of the buffer provided between the gate insulating layer and the semiconductor layer wider than that of the semiconductor layer, or by making the carrier density of the buffer layer higher that of the semiconductor layer. In addition, higher ON current between the source and the drain can be obtained by making the carrier density of the buffer layer higher than that of the semiconductor layer, and by separating the buffer layer into the source section and the drain section.

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