G - Physics – 11 – C
Patent
G - Physics
11
C
352/82.1
G11C 11/40 (2006.01) H01L 27/115 (2006.01) H01L 29/792 (2006.01)
Patent
CA 2001682
A memory element is formed of a thin film tran- sistor. The thin film transistor has a semiconductor layer, a source electrode electrically connected to the semiconductor layer, a drain electrode electrically con- nected to the semiconductor layer and formed separately from the source electrode, a gate electrode for control- ling formation of a channel of the semiconductor layer, and a gate insulation film for isolating the gate elec- trode and the semiconductor layer from each other and causing a hysteresis in the relation between the drain current and the gate circuit. The insulation film is a silicon nitride film whose composition ratio of silicon to nitrogen is in a range of approx. 0.85 to 1.1. According to this invention, the relation between the gate voltage and the drain current can be set to have a hysteresis. Therefore, the thin film transistor can be used as a memory element. Further, according to this invention, data can be written, erased and read out by selectively applying an electric field to the gate insu- lation film. Therefore, the thin film transistor can be used as a memory element.
Baba Kyuya
Konya Naohiro
Matsumoto Hiroshi
Shimomaki Shinichi
Yamada Hiroyasu
Casio Computer Co. Ltd.
Ridout & Maybee Llp
LandOfFree
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