G - Physics – 02 – F
Patent
G - Physics
02
F
356/149, 345/8
G02F 1/136 (2006.01) G02F 1/1362 (2006.01) H01L 27/12 (2006.01) G02F 1/1343 (2006.01)
Patent
CA 1313563
Abstract of the Disclosure A thin film transistor panel has a substrate on which a plurality of electrode lines are aligned in a matrix form, thin film transistors which are formed on crossing portions of the plurality of the electrode lines, a diffusible insulating film for covering said thin film transistors, and metal-diffused layers and are connected to source electrodes. The metal-diffused layers are formed by diffusing a metal into predeter- mined areas of said insulating film. If the metal- diffused layers are used as the pixel electrodes, high density display can be obtained due to the fine pixel electrodes. In addition, a manufacturing method of thin film transistor panel having the steps of forming gate electrode on a substrate, forming gate insulating films on the gate electrodes, forming semiconductor layers on said gate insulating films, forming source and drain electrodes on said semiconductor layers except for channel portions, forming a diffusible insulating film which covers the whole surface of the substrate, providing contact holes in said insulating film corresponding to said source electrodes, and forming metal-diffused layers by diffusing a metal into the insulating film and inner surfaces of said contact holes. The metal-diffused areas can be formed in high pattern accuracy, and the fine pixel electrodes can be easily obtained if the metal-diffused areas are used as the pixel electrodes.
613680
Mori Hisatoshi
Sasaki Makoto
Sato Syunichi
Casio Computer Co. Ltd.
Ridout & Maybee Llp
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