G - Physics – 02 – F
Patent
G - Physics
02
F
G02F 1/1362 (2006.01) H01L 49/02 (2006.01) H05B 33/12 (2006.01) G02F 1/1368 (2006.01) H01L 33/00 (2006.01)
Patent
CA 2358579
A pixel cell has a thin film transistor structure formed on a substrate. A signal conductor is patterned on the thin film transistor structure, and a first patterned layer of a transparent conductive material covers the signal conductor. The first patterned layer provides a pattern employed in etching a channel region of the thin film transistor structure. A dielectric layer is formed over the pixel cell and includes a via hole down to the first patterned layer of the transparent conductive material. A second layer of transparent conductive material extends through the via hole to contact the first patterned layer wherein the second layer is self-aligned to the transistor structure.
Colgan Evan G.
Schleupen Kai R.
Tsujimura Takatoshi
Au Optronics Corporation
Gowling Lafleur Henderson Llp
International Business Machines Corporation
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