Thin film transistors with self-aligned transparent pixel...

G - Physics – 02 – F

Patent

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Details

G02F 1/1362 (2006.01) H01L 49/02 (2006.01) H05B 33/12 (2006.01) G02F 1/1368 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2358579

A pixel cell has a thin film transistor structure formed on a substrate. A signal conductor is patterned on the thin film transistor structure, and a first patterned layer of a transparent conductive material covers the signal conductor. The first patterned layer provides a pattern employed in etching a channel region of the thin film transistor structure. A dielectric layer is formed over the pixel cell and includes a via hole down to the first patterned layer of the transparent conductive material. A second layer of transparent conductive material extends through the via hole to contact the first patterned layer wherein the second layer is self-aligned to the transistor structure.

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