Thin foil semiconductor negative effective mass device and...

H - Electricity – 01 – L

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

345/26, 356/53,

H01L 23/48 (2006.01) H01L 47/00 (2006.01)

Patent

CA 1141478

ABSTRACT Semiconducting material for example p-type Ge, p- type Si and the like, is formed into a thin foil, a few atoms thick, preferably by depositing the material on an atomically flat ([110] plane) surface of an in- sulating semiconductor substrate, for example GaAs, ZnSe and the like. The materials used for the foil are of a group characterized by re-entrant constant energy level contours and negative effective charge carrier masses. The foil has length and width dimensions much greater than the thickness. An electric bias field is applied across the length of the foil tending to shift the charge carrier population into a sector of negative transverse mass. In this manner the resistance across the width of the foil becomes negative and electric energy is delivered to external circuitry connected across the width of the foil. A stacked structure of two or more layers connected in parallel is contemplated for generating larger currents as needed for amplifying and oscillating circuits. SA979018

363547

LandOfFree

Say what you really think

Search LandOfFree.com for Canadian inventors and patents. Rate them and share your experience with other people.

Rating

Thin foil semiconductor negative effective mass device and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin foil semiconductor negative effective mass device and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin foil semiconductor negative effective mass device and... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFCA-PAI-O-656502

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.