H - Electricity – 01 – L
Patent
H - Electricity
01
L
345/26, 356/53,
H01L 23/48 (2006.01) H01L 47/00 (2006.01)
Patent
CA 1141478
ABSTRACT Semiconducting material for example p-type Ge, p- type Si and the like, is formed into a thin foil, a few atoms thick, preferably by depositing the material on an atomically flat ([110] plane) surface of an in- sulating semiconductor substrate, for example GaAs, ZnSe and the like. The materials used for the foil are of a group characterized by re-entrant constant energy level contours and negative effective charge carrier masses. The foil has length and width dimensions much greater than the thickness. An electric bias field is applied across the length of the foil tending to shift the charge carrier population into a sector of negative transverse mass. In this manner the resistance across the width of the foil becomes negative and electric energy is delivered to external circuitry connected across the width of the foil. A stacked structure of two or more layers connected in parallel is contemplated for generating larger currents as needed for amplifying and oscillating circuits. SA979018
363547
International Business Machines Corporation
Saunders Raymond H.
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