Thin metal-oxide layer as stable electron-injecting...

H - Electricity – 01 – L

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H01L 51/10 (2006.01) H01L 51/52 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2345781

This invention relates generally to the field of light emitting diodes (LEDs). More particularly, this invention relates to organic light emitting diodes which employ an electron-injecting cathode comprising a thin layer of an oxide of a low work function metal. More specifically, the present invention relates to LEDs which comprise: (a) a hole-injecting anode layer; (b) an electron- injecting cathode layer; and, (c) an emissive layer; wherein (i) said emissive layer is interposed between said anode layer and said cathode layer; (ii) said emissive layer comprises an electroluminescent, semiconducting, organic material; (iii) said cathode layer comprises a layer of metal oxide having a thickness of from about 15 to about 200 .ANG. and, (iv) said metal oxide is selected from the group consisting of alkali metal oxides, alkaline earth metal oxides, lanthamide metal oxides, and mixtures thereof.

Cette invention, qui a trait au domaine des diodes électroluminescentes (DEL), concerne plus précisément des diodes électroluminescentes organiques utilisant une cathode d'injection d'électrons comprenant une couche mince d'un oxyde d'un métal à faible énergie d'extraction. Elle porte, notamment, sur des diodes électroluminescentes constituées, (a), d'une couche anodique pour creusement de trou, (b), d'une couche cathodique d'injection d'électrons et, (c), d'une couche émissive. Cette couche émissive, qui vient s'intercaler entre la couche anodique et la couche cathodique, comporte un matériau organique semi-conducteur et électroluminescent. La couche cathodique comporte une couche d'oxyde métallique d'une épaisseur comprise entre 15 et 200 .ANG. environ, cet oxyde métallique étant issu du groupe constitué par des oxydes de métal alcalin, des oxydes de métal alcalino-terreux, des oxydes métalliques d'un lanthanide et par leurs mélanges.

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