Thin semiconductor gainn layer, method for preparing same,...

Details Thin semiconductor gainn layer, method for preparing same,... Thin semiconductor gainn layer, method for preparing same,...

H - Electricity

01

L

H01L 33/32 (2010.01)

Patent

CA 2405517

The invention concerns a single semiconductor GaInN layer optionally containing a low percentage of arsenic, phosphorus, or antimony, said layer emitting at least two visible lights of specific colours whereof the addition enables to obtain while light. The invention also concerns a method for preparing said layer and a light-emitting diode (LED), in particular a LED emitting white light comprising an active zone such as a thin layer and an illumination device comprising such a diode.

Couche mince, semi-conductrice, unique, de GaInN contenant éventuellement un faible pourcentage d'arsenic, de phosphore, ou d'antimoine, ladite couche émettant au moins deux lumières visibles de couleurs déterminées dont l'addition permet notamment d'obtenir de la lumière blanche. Procédé de préparation de cette couche.Diode électroluminescente (DEL), en particulier DEL émettant de la lumière blanche comprenant dans sa zone active une telle couche mince, et dispositif d'éclairage comprenant une telle diode.

Affiliated with

Also associated with

Rating

Thin semiconductor gainn layer, method for preparing same,... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin semiconductor gainn layer, method for preparing same,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin semiconductor gainn layer, method for preparing same,... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-2036400