Three-dimensional dynamic ram cell

Details Three-dimensional dynamic ram cell Three-dimensional dynamic ram cell

H - Electricity

01

L

356/25, 352/82.4

H01L 27/10 (2006.01) G11C 11/34 (2006.01) H01L 27/04 (2006.01)

Patent

CA 1222064

THREE-DIMENSIONAL DYNAMIC RAM CELL Abstract of the Invention This invention relates generally to Dynamic Random Access Memory (DRAM) cells and more particularly relates to a DRAM cell wherein the storage capacitor of the cell is disposed in a trench formed in a semiconductor substrate. Still more particularly it relates to a DRAM cell wherein the substrate is heavily doped and forms the counterelectrode of the storage capacitor while a heavily doped polycrystalline plug disposed in the trench forms the electrode of the storage capacitor. The DRAM cell includes an access transistor which is disposed over and in registry with the storage capacitor. The electrode of the latter is connected directly to the source of the access transistor.

481724

Affiliated with

Also associated with

Rating

Three-dimensional dynamic ram cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Three-dimensional dynamic ram cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Three-dimensional dynamic ram cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1205287