Three-dimensional semiconductor device

Details Three-dimensional semiconductor device Three-dimensional semiconductor device

H - Electricity

01

L

356/128

H01L 29/94 (2006.01)

Patent

CA 1199427

- 1 - Abstract: A three-dimensional semiconductor device is constructed in which MOS transistors are arranged, not only in the direction of the substrate surface, but also in a direction perpendicular thereto. At least one layer of insulator film and of single-crystal film are stacked alternately and deposited on a surface of a semiconductor substrate. An impurity-doped region formed in each semiconductor film is used as a gate, source or drain of a MOS transistor. The arrangement provides a device that has a higher integration density than heretofore available.

431117

Affiliated with

Also associated with

Rating

Three-dimensional semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Three-dimensional semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Three-dimensional semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1237392