Thyristor

H - Electricity – 01 – L

Patent

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Details

356/131, 356/53

H01L 29/74 (2006.01) H01L 21/22 (2006.01) H01L 29/06 (2006.01) H01L 29/08 (2006.01) H01L 29/10 (2006.01)

Patent

CA 1146284

ABSTRACT OF THE DISCLOSURE A thyristor has a pnpn four layers structure having a positive slope on the anode side and a negative slope on the cathode side. The ramp of a distribution of impurity concentrations in an anode-emitter layer near an anode-emitter junction is greater than the ramp of a distribution of impurity concentrations in a cathode-base layer near a central junction so as to improve the trade-off relationship between the forward voltage drop and the withstand voltage.

357686

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