Thyristor

H - Electricity – 01 – L

Patent

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356/161

H01L 29/74 (2006.01) H01L 27/08 (2006.01) H01L 29/417 (2006.01) H01L 29/749 (2006.01)

Patent

CA 1139016

ABSTRACT OF DISCLOSURE The invention herein disclosed relates to a thyristor of the MOS control type. The thyristor has a series of semiconductor layers of vary- ing conductivity types lying above one another in which the semiconductor layers lying at the ends of the series are provided with end-side electrodes and in which a part of the surface of the next-to-the-last layer not covered by the last layer is charged with a control voltage supplied via a control terminal. A power-saving control is obtained in thyristors of this type. This objective is attained in that a region of the surface of the next-to-the- last layer not covered by the last layer is covered with a thin, insulating layer on which a gate connected with a control terminal is arranged. Next to the edge of the last layer, a zone exhibiting the same conductivity type as this last layer is formed which completely penetrates the next-to-the-last layer.

333391

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