Thyristor device with self-protection against breakover...

H - Electricity – 01 – L

Patent

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356/161

H01L 29/74 (2006.01) H01L 29/06 (2006.01) H01L 29/10 (2006.01)

Patent

CA 1080857

Abstract of the Disclosure Self-protection against breakover turn-on failure is achieved for a thyristor by providing for adjustment of the curvature of the planar junction termination in the gate region. In addition, breakdown of the outer edge of the device at the junctions is maintained at a relatively higher breakdown voltage by the techniques of beveling, floating field rings or by etching around the cathode emitter region.

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