Titania thermistor and method of fabricating

Details Titania thermistor and method of fabricating Titania thermistor and method of fabricating

G - Physics

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K

356/108

G01K 7/22 (2006.01) C04B 35/46 (2006.01) G01N 27/12 (2006.01) H01C 7/04 (2006.01)

Patent

CA 1137231

TITANIA THERMISTOR AND METHOD OF FABRICATI NG ABSTRACT OF THE DISCLOSURE A high temperature thermistor and its method of fabrication are disclosed. The thermistor is fabricated from titanium dioxide ceramic forming material and is fabricated to achieve a high degree of densification approaching 100% of theoretical density. At elevated temperatures in the range of from about 700°F to about 1500°F densified titania ceramic material behaves as a semiconductor having a resistance which is responsive principally to the temperature of the thermistor element. The thermistor is fabricated by processing titania powder which includes a substantial majority of rutile phase material. The titania powder is processed to achieve a thermis- tor chip or member which demonstrates a high degree of density.

310560

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