Top-emitting surface emitting laser structures

Details Top-emitting surface emitting laser structures Top-emitting surface emitting laser structures

H - Electricity

01

S

345/32

H01S 5/183 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2037013

Abstract Top surface emitting, vertical cavity, surface emitting lasers depend upon emission through apertured top surface electrodes. Biasing current, accordingly peripheral to the laser as introduced, follows a path which comes toconfluence within the active gain region to effectively attain lasing threshold. The path is a consequence of a buried region of increased resistance which encircles the laser at or above the active region. The buried region is produced by ion implantation-induced damage with ion energy magnitude and spectrum chosen to produce an appropriate resistance gradient. Integrated, as well as discrete, lasers are contemplated.

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