Tough diamonds and method of making thereof

Details Tough diamonds and method of making thereof Tough diamonds and method of making thereof

C - Chemistry, Metallurgy

30

B

C30B 29/04 (2006.01) C30B 25/00 (2006.01)

Patent

CA 2532227

A single crystal diamond grown by microwave plasma chemical vapor deposition has a hardness of 50-90 GPa and a fracture toughness of 11-20 MPa m 1/2 A method for growing a single crystal diamond includes placing a seed diamond in a holder; and growing single crystal diamond at a temperature of about 1000 ~C to about 1100 ~C such that the single crystal diamond has a fracture toughness of 11-20 MPa m ~.

L'invention concerne un diamant monocristal fabriqué par un dépôt chimique en phase vapeur présentant une dureté comprise entre 50 et 90 GPa et une résistance à la fracture comprise entre 11 et 20 MPa m?1/2¿. L'invention concerne un procédé pour faire croître un diamant monocristal comprenant la mise en place d'un germe dans un dispositif de maintien, et la croissance dudit diamant monocristal à une température comprise entre 1000 ·C et 1100 ·C, de sorte que ledit diamant présente une résistance à la fracture comprise entre 11 et 20 MPa m?1/2¿.

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