Transducer having a silicon diaphragm for forming same

Details Transducer having a silicon diaphragm for forming same Transducer having a silicon diaphragm for forming same

G - Physics

01

L

G01L 9/00 (2006.01) B81B 3/00 (2006.01) G01L 1/16 (2006.01) G01L 9/08 (2006.01) G01P 15/08 (2006.01) G01P 15/12 (2006.01) H01L 41/22 (2006.01)

Patent

CA 2176051

A method of forming apparatus including a force transducer on a silicon substrate having an upper surface, the silicon substrate including a dopant of one of the n-type or the p-type, the force transducer including a cavity having spaced side walls and a diaphragm supported in the cavity, the diaphragm extending between the side walls of the cavity, comprising the steps of: a. implant in the substrate a layer of a dopant of the one of the n-type or the p-type; b. deposit an epitaxial layer on the upper surface of the substrate, the epitaxial layer including a dopant of the other of the n-type or the p-type; c. implant spaced sinkers through the epitaxial layer and into electrical connection with the layer of a dopant of the one of the n-type or the p-type, each of the sinkers including a dopant of the one of the n-type or the p-type; d. anodize the substrate to form porous silicon of the sinkers and the layer; e. oxidize the porous silicon to form silicon dioxide; and f. etch the silicon dioxide to form the cavity and diaphragm.

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