Transferred electron iii-v semiconductor photocathode

Details Transferred electron iii-v semiconductor photocathode Transferred electron iii-v semiconductor photocathode

H - Electricity

01

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345/19

H01L 31/02 (2006.01) H01J 1/34 (2006.01) H01J 40/06 (2006.01) H01L 31/108 (2006.01)

Patent

CA 2038262

An improved transferred electron III-V semiconductor photocathode comprising an aluminum contact pad and an aluminum grid structure that improves quantum efficiency by removing a major obstacle to electrons escaping into the vacuum and controls dark spot blooming caused by overly bright photon emission sources.

Une photocathode semi-conductrice améliorée à électrons transférés III-V comprenant une tablette de contact en aluminium et une grille en aluminium qui améliore le rendement quantique en éliminant un important obstacle à l'échappement des électrons dans le vide et contrôle l'apparition des tâches d'ombre causées par des sources d'émission de photons excessivement brillantes.

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