Transferring a programmable pattern by photon lithography

Details Transferring a programmable pattern by photon lithography Transferring a programmable pattern by photon lithography

G - Physics

03

F

G03F 7/20 (2006.01)

Patent

CA 2295635

A programmable structure for exposing a wafer (W) allows the lithographic pattern to be changed under electronic control. The programmable structure comprises a programmable array of shutters (12) and may include a programmable array of selective amplifiers (10). The shutters and selective amplifiers can work in tandem to form a "programmable layer" (PL). A diffraction limiter (14) can be used to provide projection lithography with certain advantages associated with contact lithography without requiring some of the disadvantages of contact lithography.

Une structure programmable permettant d'exposer une tranche (W) permet de modifier le motif lithographique sous commande électronique. La structure programmable comprend un réseau programmable d'obturateur (12) et peut comprendre un réseau programmable d'amplificateurs sélectifs (10). Les obturateurs et les amplificateurs sélectifs peuvent travailler en tandem pour former une couche programmable (CP). Un limiteur (14) de diffraction peut être utilisé pour constituer une lithographie par projection présentant certains avantages associés à la lithographie par impact sans apporter certains des désavantages liés à cette dernière.

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