Transistor

Details Transistor Transistor

H - Electricity

01

L

356/172

H01L 27/06 (2006.01) H01L 21/00 (2006.01) H01L 21/22 (2006.01) H01L 21/285 (2006.01) H01L 21/8222 (2006.01)

Patent

CA 1041673

ABSTRACT A semiconductor component particularly suitable for integration has at least two zones of different conductivity types, each of the zones being provided with at least one electrode, at least one of the electrodes consisting of initially undoped polycrystalline silicon which has subse- quently been doped by diffusion or ion implantation. The invention is particularly applicable to transistors the emitter electrode being made of polycrystalline silicon.

233056

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