Transistor

Details Transistor Transistor

H - Electricity

01

L

356/161

H01L 29/73 (2006.01) H01L 21/331 (2006.01) H01L 29/10 (2006.01) H01L 29/36 (2006.01) H01L 29/737 (2006.01)

Patent

CA 1286799

TRANSISTOR Abstract A transistor is described in which the base region comprises a submonolayer of essentially only dopant atoms. One embodiment is a GaAs/AlGaAs heterojunction bipolar transistor in which the base region comprisesa submonolayer of Be atoms. The effective base transit time is negligible in these transistors.

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