H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/161
H01L 29/76 (2006.01) H01L 29/10 (2006.01) H01L 29/772 (2006.01) H01L 29/778 (2006.01)
Patent
CA 1290864
TRANSISTOR COMPRISING A 2-DIMENSIONAL CARRIER GAS COLLECTOR SITUATED BETWEEN EMITTER AND GATE Abstract A previously ignored property of a degenerate 2-dimensional gas of charge carriers in a quantum well (to be termed the quantum-capacitance effect) makes possible a novel class of transistors. In these devices the collector (a quantum well having high transverse conductance) is located between gate and emitter, with a barrier layer between emitter and collector, and a relatively thin barrier layer between collector and gate, and the chemical compositions and/or thicknesses of the various layers are chosen such that application of a voltage to the gate results, as a manifestation of the quantum-capacitance effect, in an induced charge in the emitter, whereby a current between emitter and collector can be controlled by means of a voltage applied to the gate. Transistors according to the invention potentially are very fast. Exemplarily the invention is embodied in a GaAs/AlGaAs heterostructure.
580800
American Telephone And Telegraph Company
Kirby Eades Gale Baker
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