Transistor having improved turn-off time and second...

Details Transistor having improved turn-off time and second... Transistor having improved turn-off time and second...

H - Electricity

01

L

356/37

H01L 29/74 (2006.01) H01L 21/28 (2006.01) H01L 29/08 (2006.01) H01L 29/417 (2006.01)

Patent

CA 1155236

36-SP-1082 ABSTRACT OF THE DISCLOSURE A power transistor having improved turn-off characteristics and enhanced reversed second breakdown capabilities is described wherein the emitter of the transistor includes first and second regions, the first region being disposed within the second region and having lower gain than the second region. Turn off is enhanced as essentially no current flows under the lower gain first region during turn off thereby facilitating the removal of excess charge carriers when the device is in the turn-off stage.

331749

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