Transistor junction diode circuitry systems and methods

Details Transistor junction diode circuitry systems and methods Transistor junction diode circuitry systems and methods

H - Electricity

02

M

H02M 5/08 (2006.01) H01L 27/06 (2006.01) H02M 5/293 (2006.01)

Patent

CA 2756425

Methods and apparatus for capacitive voltage division are provided, an example apparatus having an input and an output and including a first switched capacitor circuit. In some embodiments, the capacitive voltage divider includes first and sec-ond MOSFETs. A first capacitor is coupled between the drain of the first MOSFET and the input to the capacitive voltage divider. A first circuit coupled to the drain of the first MOSFET is configured to pull down the drain of the first MOSFET and thus apply a reverse bias to a first junction diode internal to the first MOSFET between the drain and the bulk of the first MOSFET. A second capacitor is coupled between the source of the first MOSFET and the drain of the second MOSFET. A second circuit is config-ured to reverse bias a second junction diode between the drain and bulk of the second MOSFET.

L'invention concerne des procédés et un appareil pour la division de tension capacitive, un appareil exemplaire ayant une entrée et une sortie et comprenant un premier circuit à capacités commuté. Dans certains modes de réalisation, le diviseur de tension capacitive comprend un premier et un deuxième transistor MOSFET. Un premier condensateur est couplé entre le drain du premier transistor MOSFET et l'entrée du diviseur de tension capacitive. Un premier circuit couplé au drain du premier transistor MOSFET est configuré pour abaisser le drain du premier transistor MOSFET et donc appliquer une polarité inverse à une première diode à jonction interne au premier transistor MOSFET entre le drain et la masse du premier transistor MOSFET. Un deuxième condensateur est couplé entre la source du premier transistor MOSFET et le drain du deuxième transistor MOSFET. Un deuxième circuit est configuré pour inverser la polarité d'une deuxième diode à jonction entre le drain et la masse du deuxième transistor MOSFET.

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