Translinear static memory cell with bipolar and mos devices

Details Translinear static memory cell with bipolar and mos devices Translinear static memory cell with bipolar and mos devices

G - Physics

11

C

352/82.3

G11C 11/40 (2006.01) G11C 11/41 (2006.01) G11C 11/411 (2006.01)

Patent

CA 1281133

ABSTRACT OF THE DISCLOSURE A translinear static memory cell employs both bipolar and metal-oxide-semiconductor technologies. Bipolar transistors are employed as switching devices, whereas MOS transistors provide power supply and coupling functions. Among other advantages, the bipolar transistors provide large changes in output current for small changes in input voltage, thereby enabling high level read signals to be obtained. The MOS load and coupling transistors facilitate bidirectional current flow into and out of the cell, thereby enabling write operations to be achieved during relatively short periods of time.

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