G - Physics – 03 – H
Patent
G - Physics
03
H
G03H 1/02 (2006.01) G02B 5/32 (2006.01) G03H 1/18 (2006.01)
Patent
CA 2323474
Transparent and semitransparent diffractive elements, particularly holograms with a diffractive pattern created at least in one of two following layers with different index of refraction: a transparent bearing layer (1) from polymer or copolymer having index of refraction n < 1,7, and a holographic effect-enhancing, high refraction index layer (2) formed by chalcogenide based substances comprising at least one element from the group sulphur, selenium, tellurium, said layer (2) has n > 1,7 and its melting temperature is lower than 900 °C, whereas said substances forming said layer (2) can be binary, ternary and even more complex chalcogenides and/or chalcohalides and/or interchalcogenides systems comprising besides S or Se or Te as a more electropositive element at least one of the following elements of I. tiII V. group periodical table of the elements Cu, Ag, Au, Hg, B, Al, Ga, In, TI, Si, Ge, Sn, Pb, N, P, As, Sb, Bi. Said chalcogenide based substances can further contain at least one transient metal and/or rear earth element. Transparent and semitransparent diffractive element can further contain a protective layer (6) and/or an adhesive layer (7) and /or a fragile layer (8) and/or an anchoring layer (9). The diffractive pattern is formed in said bearing layer (1) and subsequently a said high refraction index layer (2) is deposited on the said layer (1), whereas said layer (2) comprising one or more layers chalcogenide based substances of different composition, which can be deposited subsequently or simultaneously. High refraction index layer (2) can be deposited on the transparent bearing layer (1) and only after that a diffractive pattern is mechanically formed in said high refraction index layer (2). High refraction index layer (2) can be deposited on said bearing layer (1) coloured in advance. High refraction index layer (2) can be deposited at low pressure e.g. using vacuum evaporation, sputtering or chemical vapour deposition (CVD) technique. High refraction index layer (2) can be deposited at normal pressure as a solution of chalcogenide based substances using e.g. spraying, painting or spin coating method. Chalcogenide based high refraction index layer (2) is modified by exposure or annealing induced metal diffusion and/or by halogen and/or oxygen which are implanted into said chalcogenide based high refraction index layer (2) by its interaction with halogene vapours or interaction with oxygen or through air hydrolysis. Diffractive pattern formed in said bearing layer (1) and/or in high refraction index layer (2) can be further modified by exposure to radiation and/or annealing and/or selective etching.
L'invention concerne des éléments de diffraction transparents et semi-transparents, notamment des hologrammes présentant un motif de diffraction, lesquels éléments sont formés dans l'une au moins des deux couches à indices de réfraction différents ci-après: une couche (1) de support transparente formée à partir d'un polymère ou d'un copolymère ayant un indice de réfraction n<1,7, et une couche (2) à indice de réfraction élevé accentuant l'effet holographique, formée à partir de substances à base de chalcogénure, renfermant au moins un élément du groupe constitué du soufre, du sélénium, du tellurium, ladite couche (2) ayant un indice n>1,7 et une température de fusion inférieure à 900 DEG C. Les éléments de diffraction peuvent comprendre également une couche (6) de protection et une couche (7) adhésive et/ou une couche (8) fragile et/ou une couche (9) d'ancrage. Le motif de diffraction peut être formé soit dans la couche (1) de support, puis une couche (2) à indice de réfraction élevé, comprenant une ou plusieurs couches formées à partir de substances à base de chacolgénure de compositions différentes, lesquelles peuvent être déposées ultérieurement ou simultanément, est déposée sur la couche (1), soit ladite couche (2) est tout d'abord déposée sur la couche (1) avant que le motif de diffraction soit mécaniquement formé dans ce système.
Sklenar Ales
Vlcek Miroslav
Gowling Lafleur Henderson Llp
Ovd Kinegram Ag
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