Transparent conductors comprising gallium-indium-oxide

Details Transparent conductors comprising gallium-indium-oxide Transparent conductors comprising gallium-indium-oxide

H - Electricity

01

B

H01B 1/08 (2006.01) H01L 31/0224 (2006.01) G02F 1/1343 (2006.01)

Patent

CA 2130539

Applicant has discovered that aliovalently doped gallium-indium-oxide (GaInO3) can achieve electrical conductivity comparable to wide band-gap semiconductors presently in use while exhibiting enhanced transparency and improved index matching. The material can be doped to resistivity of less than 10 milliohm-cm by small quantities of aliovalent dopants, such as tetravalent atoms. It has a refractive index of about 1.6 and can be deposited on glass substrates in polycrystalline films.

Le déposant a découvert que l'oxyde de gallium et d'indium (GaInO3), dopé par aliovalence, peut atteindre une conductivité électrique comparable à celle des semi-conducteurs actuellement utilisés, tout en offrant une meilleure transparence et un appariement amélioré de l'indice. Le matériau peut être dopé à une résistivité inférieure à 10 milliohm-cm à l'aide de petites quantités de dopants aliovalents, comme des atomes tétravalents. Il a un indice de réfraction d'environ 1,6 et peut être déposé sur des substrats de verre sous forme de pellicules polycristallines.

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