H - Electricity – 01 – B
Patent
H - Electricity
01
B
H01B 1/08 (2006.01) G02F 1/1343 (2006.01)
Patent
CA 2156557
Applicant has discovered that aliovalently doped zinc-indium-oxide where In is 40-75% of the metal elements can achieve electrical conductivity comparable to wide band-gap semiconductors presently in use while exhibiting enhanced transparency in both the visible and infrared. The material can be doped to resistivity of less than 1 milliohm-cm by small quantities of aliovalent dopants, such as tetravalent atoms. It can be deposited on glass substrates in amorphous and polycrystalline films.
Carter Sue Anne
Cava Robert Joseph
Kwo Jueinai Raynien
Phillips Julia Mae
Thomas Gordon Albert
At&t Corp.
Kirby Eades Gale Baker
LandOfFree
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