Trench cut light emitting diodes and methods of fabricating...

Details Trench cut light emitting diodes and methods of fabricating... Trench cut light emitting diodes and methods of fabricating...

H - Electricity

01

L

H01L 21/304 (2006.01) H01L 21/78 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2493853

A method is provided for forming semiconductor devices using a semiconductor substrate having first and second opposed sides, and at least one device layer on the second side of the substrate, the at least one device layer including first and second device portions. A first trench is formed in the first side of the substrate between the first and second device portions. A second trench is formed in the second side of the substrate between the first and second device portions.

L'invention concerne un procédé destiné à fabriquer des dispositifs à semiconducteur au moyen d'un substrat à semiconducteur possédant des premier et second côtés opposés, et au moins une couche de dispositif sur le second côté du substrat, cette couche de dispositif comprenant des première et seconde parties de dispositif. Une première tranchée est formée dans le premier côté du substrat entre les première et seconde parties de dispositif. Une seconde tranchée est formée dans le second côté du substrat entre les première et seconde parties du dispositif.

Affiliated with

Also associated with

Rating

Trench cut light emitting diodes and methods of fabricating... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Trench cut light emitting diodes and methods of fabricating..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trench cut light emitting diodes and methods of fabricating... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-2086508