Trench transistor

Details Trench transistor Trench transistor

H - Electricity

01

L

356/149

H01L 29/78 (2006.01) H01L 21/336 (2006.01) H01L 29/08 (2006.01) H01L 29/423 (2006.01)

Patent

CA 1236932

- 17 - TRENCH TRANSISTOR Abstract The specification describes a new MOS transistor structure in which the source gate and drain are formed within a trench in the semiconductor substrate. The gate width is determined by the depth of the trench and can be increased substantially without increasing the surface area occupied by the transistor. The result is a transistor with exceptionally high gain for a given surface area. Forming the transistor within and over a series of trenches further enhances this effect.

496248

Affiliated with

Also associated with

Rating

Trench transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Trench transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trench transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1322942