Triangular deposition chamber for a vapor deposition system

Details Triangular deposition chamber for a vapor deposition system Triangular deposition chamber for a vapor deposition system

C - Chemistry, Metallurgy

23

C

C23C 16/00 (2006.01) C23C 16/01 (2006.01) C23C 16/44 (2006.01)

Patent

CA 2120092

A process and apparatus for the manufacture of chemical vapor deposited silicon carbide which comprises conveying the reaction gases to a triangular chemical vapor deposition cell where material is deposited by chemical vapor deposition. The triangular cell provides a large surface area for deposition while occupying a minimum amount of the furnace floor surface area. The triangular cell has the added benefit in that deposited silicon carbide is of negligible thickness at the edges thereby permitting easy separation of material with a minimum of post deposition machining.

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