Trimming method for resistance value of polycrystalline...

H - Electricity – 01 – C

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354/121, 338/27

H01C 17/22 (2006.01) H01L 21/02 (2006.01) H01L 21/326 (2006.01) H01L 29/00 (2006.01)

Patent

CA 1087261

Abstract of the Disclosure Current having a density higher than a critical value is passed through a polycrystalline resistor doped with impurities at a concentration higher than a critical value to decreasingly correct the initial value of the resistance, thereby trimming the resistance value of the resistor. When the resistor is used in a semiconductor integrated curcuit, the current is passed through the existing (not additional) terminals of the integrated circuit.

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