H - Electricity – 01 – C
Patent
H - Electricity
01
C
354/121, 338/27
H01C 17/22 (2006.01) H01L 21/02 (2006.01) H01L 21/326 (2006.01) H01L 29/00 (2006.01)
Patent
CA 1087261
Abstract of the Disclosure Current having a density higher than a critical value is passed through a polycrystalline resistor doped with impurities at a concentration higher than a critical value to decreasingly correct the initial value of the resistance, thereby trimming the resistance value of the resistor. When the resistor is used in a semiconductor integrated curcuit, the current is passed through the existing (not additional) terminals of the integrated circuit.
302273
Amemiya Yoshihito
Kato Kotaro
Macrae & Co.
Nippon Telegraph And Telephone Public Corporation
LandOfFree
Trimming method for resistance value of polycrystalline... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Trimming method for resistance value of polycrystalline..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trimming method for resistance value of polycrystalline... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-908797