H - Electricity – 01 – J
Patent
H - Electricity
01
J
313/16
H01J 29/04 (2006.01) H01J 19/42 (2006.01) H01J 19/70 (2006.01) H01J 23/02 (2006.01)
Patent
CA 1109918
ABSTRACT OF THE DISCLOSURE The variety of technologies that have been applied in the development of a bonded grid cathode are described. These include chemical vapor deposition of tungsten, molybdenum, iridium BN, and Si3N4 on both sides of a sintered tungsten cathode disk. Zirconium and titanium getters have been used to eliminate nitrogen evolution problems. The getter plates are also used as heat shields for the bonded heater. Films of Si3N4 have been added to the insulation to prevent calcium and barium diffusion into the layer and maintain adequate resistivity and breakdown strength. Plasma etching was introduced as a method of removing Si3N4 from the cathode pores. A new method, erosion lithography, is used for making the fine-detail grid structure, combining air erosion and litho- graphic techniques.
336158
Lavoo Norman T.
Oliver David W.
Allen John A.
The United States Government As Represented By The Secretary Of
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