H - Electricity – 01 – S
Patent
H - Electricity
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H01S 3/00 (2006.01) H01S 5/026 (2006.01) H01S 5/028 (2006.01) H01S 5/0625 (2006.01) H01S 5/12 (2006.01) H01S 5/20 (2006.01) H01S 5/22 (2006.01) H01S 5/227 (2006.01)
Patent
CA 2381766
A tunable laser source (10) with an integrated optical modulator (20). The laser source (10) is a widely tunable semiconductor laser that is comprised of an active region on top of a thick low bandgap, waveguide layer (22), wherein both the waveguide layer (220) and the active region are fabricated between a p-doped region and an n-doped region. An electro-absorption modulator (20) is integrated into the semiconductor laser (10), wherein the electro-absorption modulator (20) shares the waveguide layer (22) with the semiconductor laser.
L'invention concerne une source laser accordable (10) à modulateur optique intégré (20). La source laser (10) est un laser semi-conducteur largement accordable constitué d'une région active au-dessus d'une bande interdite épaisse et basse, et une couche guide d'ondes (22), cette dernière ainsi que la région active étant fabriquées entre une région dopée p et une région dopée n. Un modulateur à électro-absorption (20) est intégré dans le laser semi-conducteur (10), le modulateur à électro-absorption (20) partageant la couche guide d'ondes (22) avec le laser semi-conducteur.
Coldren Larry A.
Fish Gregory
Mason Thomas Gordon Beck
Sim & Mcburney
The Regents Of The University Of California
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