H - Electricity
01
L
356/119, 356/55
H01L 29/88 (2006.01) H01L 21/203 (2006.01) H01L 29/205 (2006.01) H01L 29/885 (2006.01)
Patent
CA 1105151
ABSTRACT OF THE DISCLOSURE A tunnel diode is disclosed which includes a heterostructure consisting of a first layer of GaSb1-yAsy and a second layer of In1-xGaxAs. It is also disclosed that other alloys of Group III and Group V materials can be employed in a tunnel diode of the instant invention.
313472
Allen John A.
United States (government Of The) As Represented By The Secretary Of The Army (the)
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