Tunnel emitter upper valley transition

Details Tunnel emitter upper valley transition Tunnel emitter upper valley transition

H - Electricity

01

L

356/119

H01L 29/72 (2006.01) H01L 29/76 (2006.01)

Patent

CA 1165464

YO980-074 TUNNEL EMITTER UPPER VALLEY TRANSISTOR Abstract The invention is a three-terminal transistor structure having five layers of materials that in combination provide conduction by high mobility carrier transport across the base in an energy valley above the conduction band. The conduction is by majority carrier tunneling injection from the emitter and transport at an upper valley level across the base. The resulting structure is capable of switching in speeds of 10-12 seconds.

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