Tunnel junctions for long-wavelength vcsels

Details Tunnel junctions for long-wavelength vcsels Tunnel junctions for long-wavelength vcsels

H - Electricity

01

L

H01L 29/88 (2006.01)

Patent

CA 2567028

A tunnel junction device (102) with minimal hydrogen passivation of acceptors includes a p-type tunnel junction layer (106) of a first semiconductor material doped with carbon. The first semiconductor material includes aluminum, gallium, arsenic and antimony. An n-type tunnel junction layer (104) of a second semiconductor material includes indium, gallium, arsenic and one of aluminum and phosphorous. The junction between the p-type and an-type tunnel junction layers forms a tunnel junction (110).

L'invention concerne un dispositif de jonction à effet tunnel (102) à passivation par hydrogène minimale des accepteurs, comprenant une couche de jonction de tunnel de type p (106) constituée d'un premier matériau semi-conducteur dopé au moyen de carbone. Ce premier matériau semi-conducteur comprend de l'aluminium, du gallium, de l'arsenic et de l'antimoine. Une couche de jonction à effet tunnel de type n (104) constituée d'un deuxième matériau semi-conducteur renferme de l'indium, du gallium, de l'arsenic et soit de l'aluminium, soit du phosphore. La jonction entre les couches de jonction à effet tunnel de type p et de type n forme une jonction à effet tunnel (110).

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