Twin-tub fabrication method

Details Twin-tub fabrication method Twin-tub fabrication method

H - Electricity

01

L

356/177

H01L 21/465 (2006.01) H01L 21/8238 (2006.01) H01L 27/092 (2006.01)

Patent

CA 2032073

ABSTRACT OF THE DISCLOSURE A method is disclosed for forming self-aligned twin tubs of opposite conductivity type in a semiconductor substrate. The method comprises the steps of implanting an impurity of one conductivity type in said substrate, masking said substrate to expose a selected region thereof, etching said substrate in said exposed region to remove at least most of the initial implant from the substrate in said exposed region with at least most of said initial implant removed therefrom, implanting an impurity of the opposite conductivity type in said exposed region of said substrate, and thermally diffusing the implanted impurities to the required depth.

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