G - Physics – 01 – N
Patent
G - Physics
01
N
G01N 27/327 (2006.01) C12Q 1/02 (2006.01) G01N 27/30 (2006.01) G01N 33/487 (2006.01)
Patent
CA 2179458
A two-dimensional sensor includes a photoconductive layer whose conductivity increases at a light-irradiated spot, an insulating layer formed on the front surface of the photoconductive layer, an effect electrode formed on the back surface of the photoconductive layer, and a fence as a cell holder attached to the surface of the insulating layer for containing a cell, culture medium and a reference electrode. The sensor is placed in an incubator and a bias voltage is applied between the effect and reference electrodes. When a laser beam irradiates a spot of the back surface of the sensor, a signal is obtained from the effect electrode. This signal corresponds to a potential alteration due to the cell activity substantially at the laser-irradiated spot. The signal is processed in a computer. The beam spot size and location, corresponding to the size and the location of the measurement electrode, can be changed or adjusted easily by focusing or moving the laser beam.
Iwasaki Hiroshi
Kamei Akihito
Sugihara Hirokazu
Taketani Makoto
Matsushita Electric Industrial Co. Ltd.
Smart & Biggar
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