Two-gate field effect transistor attenuator

Details Two-gate field effect transistor attenuator Two-gate field effect transistor attenuator

H - Electricity

03

H

333/85

H03H 11/46 (2006.01) H03G 1/00 (2006.01) H03H 11/24 (2006.01)

Patent

CA 2026129

PRECIS DE LA DIVULGATION: L'invention concerne un atténuateur à transistor à effet de champ bigrille, dans lequel une charge active variable est appliquée sur la seconde grille de ce transistor à effet de champ bigrille. L'invention peut être appliquée au domaine des télécommunications spatiales.

Affiliated with

Also associated with

Rating

Two-gate field effect transistor attenuator does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Two-gate field effect transistor attenuator, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Two-gate field effect transistor attenuator will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-2015802