Two square memory cells

H - Electricity – 01 – L

Patent

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Details

352/82, 352/82.4

H01L 27/10 (2006.01) H01L 27/108 (2006.01)

Patent

CA 1283480

Abstract Two Square Memory Cells A memory is provided which includes a semiconductor substrate having a major surface and a trench disposed therein having a longitudinal axis, storage means disposed on a given sidewall of the trench, switching means having a control element and a current carrying element disposed on the given sidewall of the trench between the storage means and the major surface of the substrate and coupled to the storage means, a first electrically conductive line disposed on the given sidewall in contact with the control element of the switching means and having a longitudinal axis arranged parallel to the longitudinal axis of the trench, and a second electrically conductive line disposed on the major surface of the semiconductor substrate in contact with the current carrying electrode of the switching means and having a longitudinal axis arranged orthogonal to the longitudinal axis of the trench.

541434

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