Two terminal field effect resistor

Details Two terminal field effect resistor Two terminal field effect resistor

H - Electricity

01

L

356/121

H01L 29/76 (2006.01) H01L 27/02 (2006.01) H01L 29/04 (2006.01)

Patent

CA 1132720

ABSTRACT OF THE INVENTION A bilateral, two terminal current limiting field effect resistor device that is relatively insensitive to both positive and negative input overvoltages. The disclosed field effect re- sistor device may be utilized to protect the integrity of the gate oxide capacitance of a metal-oxide-semiconductor (MOS) device. In a preferred embodiment, the field effect resistor device is fabri- cated with a n+n-n+ or p+p-p+ semiconductive layer deposited over an insulating (e.g. sapphire) substrate. By virtue of its unique structure the present field effect resistor device has a linear code of operation for low input voltages and a saturation mode of opera- tion for higher overvoltages. The invention described herein was made in the course of or under a contract or subcontract with the department of the United States Air Force.

316704

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