Two terminal field effect resistor

Details Two terminal field effect resistor Two terminal field effect resistor

H - Electricity

01

L

356/121

H01L 29/76 (2006.01)

Patent

CA 1135873

Abstract A current limiting field effect resistor device consists of a substrate and a layer of monocrystalline semi- conductive material overlying the substrate. This layer comprises adjacent n+n-n+ regions, whereby the device operates with a linear current characteristic relative to small voltage signals and with a non-linear current characteristic relative to large overvoltage signals. A voltage gradient occurs in the n- region in response to a large overvoltage signal applied to the device to thereby cause current pinchoff and constant current operation. A dielectric layer covers at least the n- region of the layer of semiconductor material, and a pair of spaced apart electrically conductive gate regions are disposed over the dielectric layer to control the resistance of the device when a large overvoltage signal is applied to it. As a result, the device is relatively insensitive to overvoltage signals.

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