H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/119, 356/55
H01L 29/04 (2006.01) H01L 29/15 (2006.01)
Patent
CA 1098624
Abstract of the Disclosure A superlattic structure is disclosed in which alternating layers of semiconductor alloy materials provide a one dimensional spatial periodic variation in band edge energy. A first layer of the superlattice device is an alloy including a first Group III material and a first Group V material, preferably In As, while the second layer is an alloy including a second Group III material different from the first Group III material and a second Group V material different from the first Group V material, and preferably GaSb. In the superlattice structure the valence band of the second alloy is closer to the conduction band of the first alloy than it is to the valence band of the first alloy.
313473
Chang Leroy L.
Esaki Leo
Sai-Halasz George A.
Tsu Raphael
Allen John A.
The Government Of The United States As Represented By The Secret
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