U-groove mos device

Details U-groove mos device U-groove mos device

H - Electricity

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L

356/128

H01L 29/06 (2006.01) H01L 29/04 (2006.01) H01L 29/423 (2006.01) H01L 29/78 (2006.01)

Patent

CA 1115426

U-MOS SEMICONDUCTOR DEVICE Abstract of the Disclosure A semiconductor device comprised of a plurality of U-MOS elements, each including a narrow, elongated recess having a U-shaped cross-section and formed by an anisotropic etchant in a silicon substrate material having a <110> crystalline plane surface and two <111> planes perpendicular to the surface. Drain regions for each element are formed in the surface of an epitaxial layer extending over the substrate material which has the same conductivity as the drain regions and provides a common source for all U-MOS elements. Between the epitaxial layer and the substrate is a moderately doped intermediate layer having the opposite conductivity from and providing the effective device channel between the drain and source regions. The U-MOS elements have an unusual and improved current carry- ing capacity and increased speed over prior art devices, as well as providing a higher density of elements per unit of chip area.

335319

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