Ultra pure silicon carbide and high temperature...

Details Ultra pure silicon carbide and high temperature... Ultra pure silicon carbide and high temperature...

C - Chemistry, Metallurgy

30

B

C30B 25/00 (2006.01) C04B 35/571 (2006.01) C23C 16/01 (2006.01) C23C 16/32 (2006.01) C23C 16/44 (2006.01) H01L 21/205 (2006.01)

Patent

CA 2099788

ULTRA PURE SILICON CARBIDE AND HIGH TEMPERATURE SEMICONDUCTOR PROCESSING EQUIPMENT MADE THEREFROM ABSTRACT OF THE DISCLOSURE Bulk, free-standing SiC is produced by CVD having a total impurity content of about 5 ppm or less by weight, preferably less than about 3.5 ppm. Impurity elements Al, As, B, Ca, Cd, Cr, Cu, Fe, K, Li, Mg, Mn, Na, Ni, P, Sb, Ti and Zr are measured by glow discharge mass spectroscopy. The deposition process was performed under very carefully controlled conditions and utilizing special measures or techniques for controlling the O2 content of the H2 used in the CVD and keeping the deposition chamber free of particulate matter. The SiC produced is particularly suitable for applications where high purity is desired, such as high temperature semiconductor processing furnace furniture (e.g. wafer boats, process tubes, cantilever paddles or rods, and dummy wafers) and semiconductor wafer handling equipment (e.g. susceptors, vacuum chucks and transport rings).

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