Ultra small thin windows in floating gate transistors...

Details Ultra small thin windows in floating gate transistors... Ultra small thin windows in floating gate transistors...

H - Electricity

01

L

H01L 21/336 (2006.01) H01L 21/8247 (2006.01) H01L 27/115 (2006.01)

Patent

CA 2484739

A tiny oxide window, the upper layers (55, 57) are etched leaving the poly-two layer (57) over the laywe (41). The optional nitride spacers (51, 53) remain as protective barriers for the poly-one layer and its underlying oxyde layer. Source and implants (22, 24) may be made using the ONO layer as a self- alignment tool.

Fenêtres minuscules en oxyde dont les couches supérieures (55, 57) sont attaquées chimiquement, laissant la couche poly-deux (57) sur la couche (41). Les éventuels espaceurs en nitrure (51, 53) restent sous forme de barrières protectrices de la couche poly-un et de sa couche d'oxyde sous-jacente. Il est possible de former une source et des implants (22, 24) en utilisant la couche ONO comme outil d'alignement automatique.

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