C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 29/04 (2006.01) C30B 25/00 (2006.01) C30B 33/02 (2006.01)
Patent
CA 2532362
A single crystal diamond grown by microwave plasma chemical vapor deposition annealed at pressures in excess of 4.0 GPa and heated to temperature in excess of 1500 degrees C that has a hardness of greater than 120 GPa. A method for manufacture a hard single crystal diamond includes growing a single crystal diamond and annealing the single crystal diamond at pressures in excess of 4.0 GPa and a temperature in excess of 1500 degrees C to have a hardness in excess of 120 GPa.
L'invention concerne un diamant monocristal fabriqué lors d'un dépôt chimique en phase vapeur à plasma micro-onde recuit à des pressions dépassant 4.0 Gpa et chauffé à des températures dépassant 1500 degrés C, ledit diamant présentant une dureté supérieure à 120 Gpa. L'invention concerne un procédé de production dudit diamant dur monocristal comprenant la croissance d'un diamant monocristal, le recuit dudit diamant à des pression dépassant 4.0 Gpa et à une température dépassant 1500 degrés C, de manière à obtenir un diamant présentant une dureté dépassant 120 GPa.
Hemley Russell J.
Mao Ho-Kwang
Yan Chih-Shiue
Carnegie Institution Of Washington
Gowan Intellectual Property
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