H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 31/112 (2006.01) G01J 5/20 (2006.01) G01J 5/34 (2006.01) H01L 27/16 (2006.01) H01L 31/032 (2006.01) H01L 31/09 (2006.01)
Patent
CA 2212002
A thermal detector (B) includes a transducer layer (2) of semiconducting yttrium barium copper oxide which is sensitive at room temperature to radiation and provides detection of infrared radiation. In a gate-insulated transistor embodiment, a layer of ferroelectric semiconducting yttrium barium copper oxide (34) forms a gate insulator layer and increases capacitance of the transistor or latches of the transistor according to the polarization direction of the ferroelectric layer.
Un détecteur thermique (B) comporte une couche transductrice (2) composée d'yttrium barium oxyde de cuivre semi-conducteur qui estsensible, à température ambiante, au rayonnement infrarouge et assure la détection de ce type de rayonnement. Selon un mode de réalisation de l'invention comportant un transistor à grille isolante, une couche d'yttrium barium oxyde de cuivre semi-conducteur ferroélectrique (34) forme une couche d'isolant de grille et augmente la capacité du transistor ou le nombre des verrous du transistor en fonction de la direction de polarisation de la couche ferroélectrique.
Butler Donald P.
Celik-Butler Zeynep
Pao-Chuan Shan
Norton Rose Or S.e.n.c.r.l. S.r.l./llp
Research Corporation Technologies Inc.
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