Underpass in a semiconductor device

Details Underpass in a semiconductor device Underpass in a semiconductor device

H - Electricity

01

L

356/126

H01L 21/30 (2006.01) H01L 21/033 (2006.01) H01L 21/32 (2006.01) H01L 21/762 (2006.01) H01L 23/535 (2006.01)

Patent

CA 1163378

PHN 9779 21 ABSTRACT: A method of providing in a self-registering man- ner underpasses in a semiconductor device having insulated gate field effect transistor, in which the underpasses below the field oxide connect together electrode zones of the field effect transistors. The field oxide is obtained by local oxidation by means of an oxidation mask. After a first oxidation treatment a part of the oxidation mask is removed and the semiconductor body is doped locally with As or Sb atoms for the underpasses. The apertures in the doping mark coincides substantially with the part of the oxidation mask to be removed, without critical alignment being necessary therefor, in that the masking effect of the already obtained oxide is used. After the doping treatment a second oxidation treatment is carried out to complete the field oxide.

380108

Affiliated with

Also associated with

Rating

Underpass in a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Underpass in a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Underpass in a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-889577